| Type |
N |
| VDS
(V) |
60 |
| VGS
(V) |
±20 |
| VGS(th) typ.(V) |
1.5 |
| RDS(ON)@10V max.(mΩ) |
2500 |
| RDS(ON)@4.5V max.(mΩ) |
3000 |
| RDS(ON)@2.5V max.(mΩ) |
/ |
| ID
(A) |
0.34 |
| Qg
@10V
(nC) |
1.17 |
| Temperature |
-55℃~150℃ |
| ESD |
YES |
| Package (mm) |
SOT23-3L |
Trench Technology Signal MOSFET
Low On-Resistance
Low Gate Charge
ESD Protected
SOT23-3L Package
VDS 60V
RDS(ON) 1.2 Ω (Typ.)@VGS(TH)=10V
1.4 Ω (Typ.)@VGS(TH)=4.5V
ID 0.34A
